Physics

Dr. Anil U. Mane
Argonne National Laboratory, USA

Abstract : 
Atomic level self-limiting material growth mechanism in atomic layer deposition (ALD) method offers the various advantages, such as precise control layer thickness, uniform composition over very high aspect ratio three dimensional features and large scale batch processing. In addition, a variety of nanostructure materials for instance metals, oxides, nitrides, sulphides and their composites are synthesized by various type ALD methods. This make ALD route more attractive for existing nanoelectronics products improvement as well as emerging applications such as photonics, MEMS/NEMS, nanomedicine, biotechnology, nuclear, high energy physics, renewable energy and water technology. In this presentation, I will discuss nanostructure materials design, synthesis, and engineering by ALD methods especially using in-situ growth analysis tools (e.g. QCM, RGA, FTIR, electrical, etc.) and various ALD materials applications.