Physics

Dr. Abhay Shukla
Pierre and Marie Curie University, Paris, France

Abstract :

The phase diagram of hole-doped high critical temperature superconductors as a function of doping and temperature has been intensively studied with chemical variation of doping. Chemical doping can provoke structural changes and disorder, masking intrinsic effects. Alternatively a field-effect transistor geometry with an electrostatically doped, ultra-thin sample can be used. However to probe the phase diagram, carrier density modulation beyond 1014cm-2 and transport measurements performed over a large temperature range are needed. Here we use the space charge doping method1,2 to measure transport characteristics from 330~K to low temperature. We extract parameters and characteristic temperatures over a large doping range and establish a comprehensive phase diagram for one unit cell thick Bi2Sr2CaCu2O8+x as a function of doping, temperature and disorder3 .